Advanced Device Laboratory
Chief Scientist
Koji Ishibashi

- Brief resume
- 1988
- D.Eng., Graduate School of Electrical Engineering, Osaka University
- 1988
- Researcher, Frontier Research Program, RIKEN
- 1991
- Researcher, Semiconductor Laboratory, RIKEN
- 1996
- Visiting Researcher, Delft University of Technology, Netherlands
- 2003
- Chief Scientist, Advanced Device Laboratory, RIKEN (-current)
- 2003
- Adjunct Professor, Chiba University (-current)
- 2005
- Adjunct Professor, Tokyo University of Science (-current)
- 2008
- Adjunct Professor, Tokyo Institute of Technology (-current)
Outline
To explore future nanoelectronics, we develop fabrication processes of sub-10 nm structures, and study their electronic properties to apply them to functional nanodevices. We use carbon nanotubes, semiconductor (Si, Ge, InAs, et al.) nanowires, graphene and functional molecules as building blocks of those nanostructures. Besides, we are interested in the THz properties of solid-state materials and development of a near-field THz imaging system. Surface analysis with medium energy ion beam scattering is also our research target. With a combination of the top-down and bottom-up technologies, we fabricate quantum dots, CNT/molecule heterostructures, and semiconductor/superconductor hybrid nanostructures for use in single electron devices, quantum computing devices, new quantum THz detectors and so on.
Recent Research Topic
Nanoelectronics research beyond CMOS transistors

- Fig. 1 Single electron inverter fabricated with an individual carbon nanotube

- Fig. 2 Quantum dot devices with an individual Si nanowire
We develop sub-10 nm scale nanostructures and study their electronic properties to explore possible applications to future nanoelectronics beyond CMOS. For that purpose, we use materials such as carbon nanotubes, semiconductor nanowires (Si, Ge and compound), graphene and molecules that are self-assembled in a size that is difficult to achieve with conventional top-down technology. The nanodevices we currently study are single electron devices where ultra-low power consumption is expected, quantum computing devices (qubits) composed of charge, spin and flux, and functional THz detectors based on the quantum response of the nanodevices to THz waves.
Quantum dots are basic nanostructures we use for nanodevices, where electrons are confined in small spaces. They are often called “artificial atoms,” and the one-dimensional hard wall potential well is an appropriate model of the carbon nanotube quantum dot. The single particle states are designed there with the Zeeman splitting in magnetic fields. This means that a single spin is created, which is a spin quantum bit. Coherent control of the artificial quantum state is one of our main research targets. It could be a spin state in the quantum dot, or the superconducting state in superconductor/ normal material hybrid nanostructures. The carbon nanotube and molecule heterostructures are ultimate nanostructures with a molecular scale. In those very small nanostructures, quantum effects could be observable even at room temperature.
In addition to developing discrete quantum devices, developing techniques to integrate those devices is also an important research target.

- Fig. 3 Zeeman splitting of single particle levels in the carbon nanotube artificial atom

- Fig. 4 THz photon assisted tunneling in carbon nanotube quantum dots
Selected Publications
- S. Y. Huang, S. K. Shin, N. Fukata, K. Ishibashi, A single-electron transistor and an even-odd effect in chemically synthesied Ge nanowires, J. Appl. Phys. 2011, 109, 036101.
- Y. Kawano, T. Uchida, K. Ishibashi, Terahertz sensing with a carbon nanotube/two-dimensional electron gas hybrid transistor, Appl. Phys. Lett. 2009, 95, 083123.
- S. Moriyama, et al. Coupled quantum dots in a graphene-based two-dimensional semimetal, Nano Lett. 2009, 9, 2891.
- Y. Kawano, K. Ishibashi, An on-chip near-field terahertz probe and detector, Nature Photon. 2008, 2, 618.
- Y. Kawano, T. Fuse, S. Toyokawa, T. Uchida, K. Ishibashi, Terahertz photon-assisted tunneling in carbon nanotube quantum dots, J. Appl. Phys. 2008, 103, 034307.
- H. Maki, T. Sato, K. Ishibashi, Direct observation of the deformation and the band gap change from an individual single-walled carbon nanotube under uniaxial strain, Nano Lett. 2007, 7, 890.
- T. Fuse, Y. Kawano, T. Yamaguchi, Y. Aoyagi, K. Ishibashi, Quantum response of carbon nanotube quantum dots to terahertz wave irradiation, Nanotechnol. 2007, 18, 044001.
- K. Ishibashi, S. Moriyama, D. Tsuya, T. Fuse, M. Suzuki, Quantum-Dot Nanodevices with Carbon Nanotubes, J. Vac. Sci. Technol. 2006, A24, 1349.
- S. Moriyama, T. Fuse, M. Suzuki, Y. Aoyagi, K. Ishibashi, Four-electron shell structures and an interacting two-electron system in carbon nanotube quantum dots, Phys. Rev. Lett. 2005, 94, 186806.
- K. Ishibashi, D. Tsuya, M. Suzuki, Y. Aoyagi, Fabrication of single electron inverter in multiwall carbon nanotubes, Appl. Phys. Lett. 2003, 82, 3307.
Core Members
| Principal Investigator |
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| Koji Ishibashi |
Chief Scientist |
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| Staff Scientist |
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| Shu Watanabe |
Senior Research Scientist |
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| Tomohiro Yamaguchi |
Senior Research Scientist |
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| Masashi Nantoh |
Senior Research Scientist |
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| Hideki Hirayama |
Senior Research Scientist |
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| Akira Hida |
Research Scientist |
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| Postdoctoral Fellow |
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| Tomoko Fuse |
Special Postdoctoral Researcher |
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| Xin Zhou |
Special Postdoctoral Researcher |
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| Zhihai Wang |
Foreign Postdoctoral Researcher |
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| Shaoyun Huang |
Contract Researcher |
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| Takahiro Morimoto |
Contract Researcher |
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| Student Trainee |
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| Technical Assistant |
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| Masaru Mihara |
Technical Staff I |
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| Administrative Assistant |
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| Visiting Research Staff |
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